Effect of Ge nanolayer stacking order on performance of CZTSSe thin film solar cells

被引：7

作者：

Lee, Byeong Hoon ^{[1
,2
]}

Gour, Kuldeep Singh ^{[1
,2
]}

Karade, Vijay ^{[1
,2
]}

Jang, Jun Sung ^{[1
,2
]}

Kim, Jihun ^{[1
,2
,3
]}

Jo, Eunae ^{[1
,2
]}

Gang, Myeng Gil ^{[1
,2
,4
]}

Lee, Dong Min ^{[1
,2
]}

Lee, In Jae ^{[1
,2
,5
]}

Park, Jongsung ^{[1
,2
,6
]}

Kim, Jin Hyeok ^{[1
,2
]}

机构：

[1] Chonnam Natl Univ, Optoelect Convergence Res Ctr, Gwangju 61186, South Korea

[2] Chonnam Natl Univ, Dept Mat Sci & Engn, Gwangju 61186, South Korea

[3] Gwangju Inst Sci & Technol, Sch Integrated Technol, 123 Cheomdangwagi Ro, Gwangju 61005, South Korea

[4] SCOTRA Corp, 322 Tera Tower,167 Songpa Daero, Seoul, South Korea

[5] Solarnd Corp, Res & Dev, Gyeonggi Do, South Korea

[6] Green Energy Inst, Solar Energy R&D Dept, Mokpo 58656, South Korea

来源：

MATERIALS LETTERS | 2021年 / 284卷 / 284期

基金：

新加坡国家研究基金会;

关键词：

Ge doping; CZTSSe; Kesterite; Thin films; Sputtering; Solar cells;

D O I：

10.1016/j.matlet.2020.128981

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In the present work, the effect of germanium (Ge) stacking order on optoelectronic properties of Cu2ZnSn (S, Se)(4) (CZTSSe) thin films are investigated. It was found that the addition of the Ge nanolayer significantly improved the CZTSSe absorber quality, elemental distribution, and reduced secondary phases. The Ge nanolayer deposited on top and bottom of the precursor improved open-circuit voltage (V-oc) and short-circuit current density (J(sc)) in the device respectively. The device with optimum position and thickness of the Ge nanolayer improved device efficiency from 6.91% to 7.87%. Further, these experimental results suggest that the optimum amount of Ge nanolayer and their position can further improve optoelectronic properties of kesterite CZTSSe absorbers which can be used to achieve high-efficiency in kesterite based solar cells. (c) 2020 Elsevier B.V. All rights reserved.

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页数：5

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