High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection

被引：73

作者：

Hoang, A. M. ^{[1
]}

Chen, G. ^{[1
]}

Chevallier, R. ^{[1
]}

Haddadi, A. ^{[1
]}

Razeghi, M. ^{[1
]}

机构：

[1] Northwestern Univ, Dept Elect Engn & Comp Sci, Ctr Quantum Devices, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 25期

关键词：

Indium antimonides - Infrared detectors - III-V semiconductors - Gallium compounds - Antimony compounds - Infrared radiation - Indium arsenide;

D O I：

10.1063/1.4884947

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Very long wavelength infrared photodetectors based on InAs/InAsSb type-II superlattices are demonstrated on GaSb substrate. A heterostructure photodiode was grown with 50% cut-off wavelength of 14.6 mu m. At 77 K, the photodiode exhibited a peak responsivity of 4.8 A/W, corresponding to a quantum efficiency of 46% at -300mV bias voltage from front side illumination without antireflective coating. With the dark current density of 0.7 A/cm(2), it provided a specific detectivity of 1.4 x 10(10) Jones. The device performance was investigated as a function of operating temperature, revealing a very stable optical response and a background limited performance below 50K. (C) 2014 AIP Publishing LLC.

引用

页数：4

共 24 条

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