Sensitivity of a chemically amplified three-component resist containing a dissolution inhibitor for extreme ultraviolet lithography

A chemically amplified three-component resist was prepared by adding a dissolution inhibitor as the third component in an X-ray resist, and its sensitivity and resolution were evaluated for the application in extreme ultraviolet (EUV) lithography. The chemically amplified three-component resist, which consists of a base resin, a photo-acid generator (PAG) and a dissolution inhibitor, achieved high sensitivity with an exposure dose below 10 mJ cm(-2). Furthermore, the chemically amplified three-component resist exhibited higher resolution and sensitivity than a resist without a dissolution inhibitor. The dissolution inhibitor was converted to a dissolution promoter containing carboxylic groups by exposure to EUV light, and it acted as a plasticizer in the resist, resulting in facile diffusion of the protons generated from the PAG. Thus, novel EUV resists with high sensitivity and resolution could be designed utilizing chemically amplified three-component resist containing a dissolution inhibitor.