Super Steep Subthreshold Slope PN-Body Tied SOI FET's of Ultra Low Drain Voltage=0.1V with Body Bias below 1.0V

被引：0

作者：

Yoshida, Takahiro ^{[1
]}

Ida, Jiro ^{[1
]}

Horii, Takashi ^{[1
]}

Okihara, Masao ^{[2
]}

Arai, Yasuo ^{[3
]}

机构：

[1] Kanazawa Inst Technol, Div Elect Engn, 7-1 Ohgigaoka, Nonoichi, Ishikawa 9218501, Japan

[2] LAPIS Semicond Co Ltd, Yokohama, Kanagawa, Japan

[3] KEK, High Energy Accelerator Res Org, Tsukuba, Ibaraki, Japan

来源：

2016 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S) | 2016年

关键词：

Steep Subthreshold Slope; SOI MOSFET; Floating Body Effect;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It was demonstrated that the body bias appearing the super steep Subthreshold Slope (SS) reduces from over 5V to below 1V on the PN-body tied SOIFET's which show the super steep SS with the ultralow drain voltage of 0.1V, when the impurity concentration of the N region on the body tied area is redesigned from the high concentration of the N+ to the low N-. The 3D device simulations also confirmed it and indicated that the optimum length of the N region exits on the different impurity concentration of it for appearing the super steep SS with the low body bias.

引用

页数：3

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