Influence of the Germanium content on the amorphization of silicon-germanium alloys during ion implantation

被引：6

作者：

Belafhaili, A. ^{[1
]}

Laanab, L. ^{[1
]}

Cristiano, F. ^{[2
]}

Cherkashin, N. ^{[3
,4
]}

Claverie, A. ^{[3
,4
]}

机构：

[1] Univ Mohammed 5, Fac Sci, LCS, Rabat, Morocco

[2] CNRS, LAAS, F-31077 Toulouse, France

[3] CNRS, CEMES, F-31055 Toulouse, France

[4] Univ Toulouse, F-31055 Toulouse, France

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2013年 / 16卷 / 06期

关键词：

Ion implantation; SiGe alloy; Amorphization; Simulation; Single defects; DAMAGE; KINETICS; DEFECTS;

D O I：

10.1016/j.mssp.2013.04.014

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied by transmission electron microscopy the amorphization of silicon-germanium (SiGe) alloys by Ge+ implantation. We show that when implanted with the same amorphization dose, the resulting amorphous layers get narrower when the Ge content increases. The experimental results can be simulated using the critical damage energy density model assuming that the amorphization threshold rises linearly with the Ge content from 3 eV/at for pure Si to 5 eV/at for pure Ge. These results and simulations are needed to optimize the fabrication of highly doped regions in SiGe alloys. (C) 2013 Elsevier Ltd. All rights reserved.

引用

收藏

页码：1655 / 1658

页数：4

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