Classification of bound exciton complexes in bulk ZnO by magnetophotoluminescence spectroscopy

被引：19
作者：
Ding, L. [3 ]
Li, B. K. [3 ]
He, H. T. [3 ]
Ge, W. K. [3 ]
Wang, J. N. [3 ]
Ning, J. Q. [1 ,2 ]
Dai, X. M. [1 ,2 ]
Ling, C. C. [1 ,2 ]
Xu, S. J. [1 ,2 ]
机构：
[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
[2] Univ Hong Kong, HKU CAS Joint Lab New Mat, Hong Kong, Hong Kong, Peoples R China
[3] Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 05期
关键词：
defect states; excitons; g-factor; II-VI semiconductors; magneto-optical effects; photoluminescence; polarisation; wide band gap semiconductors; zinc compounds;
D O I：
10.1063/1.3087762
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A series of bound exciton transitions of a bulk ZnO sample has been studied by high resolution magnetophotoluminescence spectra. Ten sharp intense bound exciton emissions are classified into three groups according to their dependences on magnetic field, angle, and circular polarization of the emission lines. The charge states of the defect centers and exciton types are identified. The effective g factors of the electrons and holes are determined.
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页数：4
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