Highly efficient Nd:YVO4 laser by direct in-band diode pumping at 914 nm

被引：76

作者：

Sangla, Damien ^{[1
,2
]}

Castaing, Marc ^{[1
,3
]}

Balembois, Francois ^{[1
]}

Georges, Patrick ^{[1
]}

机构：

[1] Univ Paris 11, CNRS, Lab Charles Fabry, Inst Opt, F-91127 Palaiseau, France

[2] Univ Lyon, CNRS, UMR5620, Lab Physicochim Mat Luminescents, F-69622 Villeurbanne, France

[3] Oxxius SA, F-22300 Lannion, France

来源：

OPTICS LETTERS | 2009年 / 34卷 / 14期

关键词：

ND-YVO4; LASER; LEVEL; ND;

D O I：

10.1364/OL.34.002159

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A Nd: YVO4 crystal was pumped directly into the emitting level by a laser diode at 914 nm for the first time to our knowledge. We achieved an output power of 11.5 W at 1064 nm for an absorbed pump power of 14.6 W, corresponding to an optical efficiency of 78.7%. We demonstrated that thermal effects are very weak, in agreement with the low quantum defect of only 14.1%. (C) 2009 Optical Society of America

引用

页码：2159 / 2161

页数：3

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