Midinfrared absorption of PbSe/Pb1-xEuxTe quantum dot superlattices in IV-VI microcavities -: art. no. 245321

被引:8
作者
Schwarzl, T
Heiss, W
Springholz, G
Krenn, H
Fromherz, T
Raab, A
Vavra, I
机构
[1] Johannes Kepler Univ Linz, Inst Halbleiter & Festkorperphys, A-4040 Linz, Austria
[2] Karl Franzens Univ Graz, Inst Expt Phys, A-8010 Graz, Austria
[3] Slovak Acad Sci, Inst Elect Engn, SK-84239 Bratislava, Slovakia
来源
PHYSICAL REVIEW B | 2002年 / 65卷 / 24期
关键词
D O I
10.1103/PhysRevB.65.245321
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The midinfrared absorption of highly ordered self-assembled PbSe/Pb(1-x)Eu(x)Te quantum dot superlattices is investigated. A different approach is used for quantitative determination of the absorption spectrum of the dot superlattice by inserting it into a high-finesse microcavity structure with a small mode spacing and Pb(1-x)Eu(x)Te/EuTe Bragg mirrors. For such microcavities, we show a linear relation between the width of each cavity resonance and the extinction coefficient at the resonance energy. Thus, the absorption spectrum is experimentally determined from the resonance widths. It reveals a narrow peak arising from the quantum dots and a step from the two-dimensional wetting layers. The peak absorption coefficient of the dot ensemble amounts to 2.5x10(4) cm(-1) and is similar to that of the wetting layers. We also present calculations of the dispersion of the absorption coefficient based on model dielectric functions of quantum dots and wetting layers. From a fit to the experimental absorption spectrum, we deduce interband transition energies as well as corresponding oscillator strengths and level broadenings. The broadening of the dot transition due to dot size fluctuations of the large quantum dot ensemble is only 8.7 meV, confirming the exceptionally high dot size uniformity in the PbSe quantum dot superlattice.
引用
收藏
页码:2453211 / 2453219
页数:9
相关论文
共 56 条
[1]   Monolithic heteroepitaxial PbTe-on-Si infrared focal plane array with 96 x 128 pixels [J].
Alchalabi, K ;
Zimin, D ;
Zogg, H ;
Buttler, W .
IEEE ELECTRON DEVICE LETTERS, 2001, 22 (03) :110-112
[2]  
Alferov Z, 2001, SPRINGER PROC PHYS, V87, P14
[3]  
BAUER G, 1995, J NONLINEAR OPT PHYS, V4, P181
[4]   Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering [J].
Colocci, M ;
Vinattieri, A ;
Lippi, L ;
Bogani, F ;
Rosa-Clot, M ;
Taddei, S ;
Bosacchi, A ;
Franchi, S ;
Frigeri, P .
APPLIED PHYSICS LETTERS, 1999, 74 (04) :564-566
[5]   QUANTUM CASCADE LASER [J].
FAIST, J ;
CAPASSO, F ;
SIVCO, DL ;
SIRTORI, C ;
HUTCHINSON, AL ;
CHO, AY .
SCIENCE, 1994, 264 (5158) :553-556
[6]  
FARAD S, 1994, PHYS REV B, V50, P8086
[7]  
FARAD S, 1996, SCIENCE, V274, P1350
[8]   High-efficiency midinfrared "W" laser with optical pumping injection cavity [J].
Felix, CL ;
Bewley, WW ;
Vurgaftman, I ;
Olafsen, LJ ;
Stokes, DW ;
Meyer, JR ;
Yang, MJ .
APPLIED PHYSICS LETTERS, 1999, 75 (19) :2876-2878
[9]   Auger recombination dynamics of lead salts under picosecond free-electron-laser excitation [J].
Findlay, PC ;
Pidgeon, CR ;
Kotitschke, R ;
Hollingworth, A ;
Murdin, BN ;
Langerak, CJGM ;
van der Meer, AFG ;
Ciesla, CM ;
Oswald, J ;
Homer, A ;
Springholz, G ;
Bauer, G .
PHYSICAL REVIEW B, 1998, 58 (19) :12908-12915
[10]   Vertically stacked quantum dots grown by ALMBE and MBE [J].
Frigeri, P ;
Bosacchi, A ;
Franchi, S ;
Allegri, P ;
Avanzini, V .
JOURNAL OF CRYSTAL GROWTH, 1999, 201 :1136-1138