InGaN/InGaN multiple-quantum-well grown on InGaN/GaN semi-bulk buffer for blue to cyan emission with improved optical emission and efficiency droop

被引：18

作者：

Alam, Saiful ^{[1
,2
,3
]}

Sundaram, Suresh ^{[2
]}

Elouneg-Jamroz, Miryam ^{[3
]}

Li, Xin ^{[2
]}

El Gmili, Youssef ^{[2
]}

Robin, Ivan Christophe ^{[3
]}

Voss, Paul L. ^{[1
,2
]}

Salvestrini, Jean-Paul ^{[2
,4
]}

Ougazzaden, Abdallah ^{[1
,2
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[2] Georgia Tech, CNRS, UMI 2958, F-57070 Metz, France

[3] CEA LETI, Minatec Campus, F-38054 Grenoble, France

[4] Univ Lorraine, LMOPS, EA4423, F-57070 Metz, France

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2017年 / 104卷

关键词：

InGaN multi-quantum-well; InGaN buffer; LED; MOVPE; LIGHT-EMISSION;

D O I：

10.1016/j.spmi.2017.02.036

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In0.16Ga0.84N/In0.05Ga0.95N Multiple Quantum Well (MQW) structure grown on a 70 nm thick high quality semi-bulk InGaN buffer layer is reported. Temperature dependent photoluminescence (PL) reveals 67.5% of room temperature Internal Quantum Efficiency (IQE) at an emission peak of similar to 455 nm with FWHM of 20 nm. Low temperature PL study shows clear improvement in emission intensity when conventional GaN buffer and GaN barrier are replaced by semi-bulk InGaN buffer in addition with InGaN barrier. Simulation confirms improved IQE and reduced efficiency droop when using semi-bulk as buffer which is attributed to the improved overlapping of electron-hole wave functions due to the reduced internal electric field from counteraction by surface polarization field. This efficiency improvement is very beneficial for high In content green LEDs where the efficiency is limited by polarization induced Quantum Confined Stark Effect (QCSE) for excess indium content. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：291 / 297

页数：7

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