Wide tuning range low phase noise VCO for V-band application

被引:4
|
作者
Ambulker, Sunanda [1 ]
Nakhate, Sangeeta [1 ]
机构
[1] MANIT, Dept Elect & Commun Engn, Bhopal 462003, Madhya Pradesh, India
关键词
phase noise; voltage-controlled oscillators; millimetre wave oscillators; CMOS analogue integrated circuits; transformers; semiconductor switches; integrated circuit noise; circuit tuning; field effect MIMIC; power; 9; 39; mW; frequency 46 GHz to 61; 2; GHz; voltage; 0; 8; V; single n-type metal-oxide-semiconductor switch; variable capacitor; p-type metal-oxide-semiconductor; transformer tuned technique; multiband scheme; power dissipation; FTR; frequency tuning range; 1P8M technology; complementary metal-oxide-semiconductor single polyeight metal technology; MMW VCO; millimetre wave voltage controlled oscillator; V-band application; wide tuning range low phase noise VCO; OSCILLATOR; DESIGN;
D O I
10.1049/iet-map.2017.0235
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this study, millimetre wave (MMW) voltage controlled oscillator (VCO) is designed using 130nm complementary metal-oxide-semiconductor single poly eight metals (1P8M) technology. Under 0.8V supply, VCO can be tuned from 46 to 61.2GHz, i.e. 28% frequency tuning range (FTR) is achieved. For the highest oscillation frequency, phase noise at 10MHz offset frequency is -117.3dBc/Hz, while the power dissipation is 9.39mW. The FTR is improved by adopting multiband scheme using transformer tuned technique. Improvement in phase noise is done with a P-type metal-oxide-semiconductor as a variable capacitor for fine tuning of each band. Single N-type metal-oxide-semiconductor switch is placed on secondary side of transformer which makes the transformer tunable. Figure of merit of the proposed circuit is -183.3dBc/Hz. Proposed VCO provides wide FTR and acceptable low phase noise for V-band application.
引用
收藏
页码:756 / 764
页数:9
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