Wide tuning range low phase noise VCO for V-band application

被引：4

作者：

Ambulker, Sunanda ^{[1
]}

Nakhate, Sangeeta ^{[1
]}

机构：

[1] MANIT, Dept Elect & Commun Engn, Bhopal 462003, Madhya Pradesh, India

来源：

IET MICROWAVES ANTENNAS & PROPAGATION | 2018年 / 12卷 / 05期

关键词：

phase noise; voltage-controlled oscillators; millimetre wave oscillators; CMOS analogue integrated circuits; transformers; semiconductor switches; integrated circuit noise; circuit tuning; field effect MIMIC; power; 9; 39; mW; frequency 46 GHz to 61; 2; GHz; voltage; 0; 8; V; single n-type metal-oxide-semiconductor switch; variable capacitor; p-type metal-oxide-semiconductor; transformer tuned technique; multiband scheme; power dissipation; FTR; frequency tuning range; 1P8M technology; complementary metal-oxide-semiconductor single polyeight metal technology; MMW VCO; millimetre wave voltage controlled oscillator; V-band application; wide tuning range low phase noise VCO; OSCILLATOR; DESIGN;

D O I：

10.1049/iet-map.2017.0235

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, millimetre wave (MMW) voltage controlled oscillator (VCO) is designed using 130nm complementary metal-oxide-semiconductor single poly eight metals (1P8M) technology. Under 0.8V supply, VCO can be tuned from 46 to 61.2GHz, i.e. 28% frequency tuning range (FTR) is achieved. For the highest oscillation frequency, phase noise at 10MHz offset frequency is -117.3dBc/Hz, while the power dissipation is 9.39mW. The FTR is improved by adopting multiband scheme using transformer tuned technique. Improvement in phase noise is done with a P-type metal-oxide-semiconductor as a variable capacitor for fine tuning of each band. Single N-type metal-oxide-semiconductor switch is placed on secondary side of transformer which makes the transformer tunable. Figure of merit of the proposed circuit is -183.3dBc/Hz. Proposed VCO provides wide FTR and acceptable low phase noise for V-band application.

引用

页码：756 / 764

页数：9

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