Vapour growth of II-VI solid solution single crystals by contact-free technique

被引：45

作者：

Korostelin, YV ^{[1
]}

Kozlovsky, VI ^{[1
]}

机构：

[1] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 119991, Russia

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2004年 / 371卷 / 1-2期

关键词：

vapour growth; solid solutions; II-VI compounds; doping; semiconductors; crystal growth; vapour deposition; impurities in semiconductors;

D O I：

10.1016/j.jallcom.2003.07.024

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A modified vapour phase contact-free method to grow homogeneous single crystals of solid solutions (SS) of II-VI compounds is presented. Single crystals of U(S. Se). Zn(S. Se), (Zn, Cd)Se, (Zn, Cd)S, Zn(S, Te), Zn(Se, Te), and Cd(S, Te) up to 55 mm in diameter were grown. Different applications of the crystals are discussed. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：25 / 30

页数：6

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