High Linearity MMIC Power Amplifier Design with Controlled Junction Temperature

被引：0

作者：

Silva, Oliver ^{[1
]}

Angelov, Iltcho ^{[1
]}

Zirath, Herbert ^{[1
]}

Rorsman, Niklas ^{[1
]}

机构：

[1] Chalmers Univ Technol, Microwaves Elect Lab, S-41296 Gothenburg, Sweden

来源：

2014 INTERNATIONAL WORKSHOP ON INTEGRATED NONLINEAR MICROWAVE AND MILLIMETRE-WAVE CIRCUITS (INMMIC) | 2014年

关键词：

Junction temperature; high linearity; modeling; C-Band; bus-bar combiner; power amplifier;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A combination of techniques for designing high linearity power amplifiers under controlled junction temperature required for space applications is explained and demonstrated. Junction temperature calculation is taken into account in the transistor selection to ensure high reliability operation and is verified by IR measurement. A non linear model is used to accurately predict harmonics generation and intermodulation products. Optimal bias point and loads are chosen to improve the linearity performance. The design method is demonstrated in a C band high linearity GaAs MMIC power. The techniques described lead to an output 1dB compression point of 26.6dBm, saturated power 28.9dBm and PAE 20.9%, with a gain higher than 30dB. The output third order intercept point (OIP3) reaches levels over 40dBm with power consumption less than 2W. The design keeps the critical junction temperature under 108 C and de-rating drain bias of 4 volts is used.

引用

页数：3

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