Electrical properties of fine-grained polycrystalline CdTe

被引：11

作者：

Kolosov, SA ^{[1
]}

Klevkov, YV ^{[1
]}

Plotnikov, AF ^{[1
]}

机构：

[1] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 119991, Russia

来源：

SEMICONDUCTORS | 2004年 / 38卷 / 04期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.1734674

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The temperature dependence of conductivity, the photoconductivity, and the hole mobility in fine-grained polycrystalline CdTe have been studied. The results obtained agree well with the concept of charged grain boundaries. The potential barriers at grain boundaries and the way in which these barriers affect the free carrier mobilities have been determined. (C) 2004 MAIK "Nauka/Interperiodica".

引用

页码：455 / 460

页数：6

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