Resistive switching characteristics of Co2FeSi and Mn with Al2O3 granular nanocomposites

被引：4

作者：

Talaeizadeh, M. ^{[1
]}

Jamilpanah, L. ^{[2
]}

Ebrahimi, S. A. Seyed ^{[1
]}

Mohseni, S. M. ^{[2
]}

机构：

[1] Univ Tehran, Coll Engn, Adv Magnet Mat Res Ctr, Sch Met & Mat, Tehran 111554563, Iran

[2] Shahid Beheshti Univ, Dept Phys, Tehran 19839, Iran

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2020年 / 516卷

关键词：

Nanostructured materials; Electronic properties; X-ray diffraction; Mechanical alloying; Co2FeSi; Memristor device; Granular composite; MEMORY; MECHANISM; FILMS;

D O I：

10.1016/j.jmmm.2020.167336

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Materials containing high amounts of grain boundaries and crystal defects are promising candidates for the applications in memristor devices due to their intrinsic low manipulation energy. Here, we present memristive characteristics of granular composite samples containing Co2FeSi and Mn (CFS + M) for the first time. The structure is composed of an Mn oxide phase detected by x-ray diffraction (XRD) patterns which will role as an active layer. The bipolar memristance effect is seen in all samples which can be attributed to a valence change mechanism (VCM). Also, the composition of the granular material with different amounts of Al2O3 nano phases increased the R-HRS/R-LRS ratio through the reduction of the OFF current. Optimally, the R-HRS/R-LRS ratio of 1117 and a low threshold voltage of 0.88 V is obtained. Results can be considered for the development of memristors based on granular materials.

引用

页数：6

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[1] Reproducible switching effect in thin oxide films for memory applications [J].