Scalable Fabrication of Ambipolar Transistors and Radio-Frequency Circuits Using Aligned Carbon Nanotube Arrays

被引：32

作者：

Wang, Zhenxing ^{[1
,2
]}

Liang, Shibo ^{[1
,2
]}

Zhang, Zhiyong ^{[1
,2
]}

Liu, Honggang ^{[3
]}

Zhong, Hua ^{[1
,2
]}

Ye, Lin-Hui ^{[1
,2
]}

Wang, Sheng ^{[1
,2
]}

Zhou, Weiwei ^{[4
]}

Liu, Jie ^{[4
]}

Chen, Yabin ^{[1
,5
]}

Zhang, Jin ^{[1
,5
]}

Peng, Lian-Mao ^{[1
,2
]}

机构：

[1] Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China

[2] Peking Univ, Dept Elect, Beijing 100871, Peoples R China

[3] Chinese Acad Sci, Microwave Devices & Integrated Circuits Dept, Inst Microelect, Beijing 100029, Peoples R China

[4] Duke Univ, Dept Chem, Durham, NC 27708 USA

[5] Peking Univ, Coll Chem & Mol Engn, Beijing 100871, Peoples R China

来源：

ADVANCED MATERIALS | 2014年 / 26卷 / 04期

基金：

美国国家科学基金会;

关键词：

carbon nanotubes (CNTs); radio-frequency; ambipolar transistors; frequency doubler; frequency mixers; HIGH-DENSITY; GRAPHENE TRANSISTORS; PERFORMANCE; ELECTRONICS; GROWTH; SCALE; GATE;

D O I：

10.1002/adma.201302793

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Field-effect transistors (FETs) are fabricated on a large scale and with a high yield of over 95% based on aligned carbon nanotube arrays directly grown on quartz, and exhibit ambipolar transfer characteristics that can be used to construct ambipolar RF circuits. RF circuits including frequency doubler and mixer based on the ambipolar FETs demonstrate unequivocally working frequency up to 40 GHz. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：645 / 652

页数：8

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