Degradation Induced by Forward Synchronized Stress in Poly-Si TFTs and Its Reduction by a Bridged-Grain Structure

被引：7
作者：
Zhang, Meng [1 ]
Ma, Xiaotong [1 ]
Deng, Sunbin [2 ]
Zhou, Wei [2 ]
Yan, Yan [1 ]
Wong, Man [2 ]
Kwok, Hoi-Sing [2 ]
机构：
[1] Shenzhen Univ, Inst Microscale Optoelect, Shenzhen 518060, Peoples R China
[2] Hong Kong Univ Sci & Technol, State Key Lab Adv Displays & Optoelect Technol, Hong Kong, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2019年 / 40卷 / 09期
基金：
中国国家自然科学基金;
关键词：
Forward synchronized stress (FSS); polycrystalline silicon; thin-film transistors (TFTs); dynamic hot carrier (HC); bridged grain;
D O I：
10.1109/LED.2019.2931007
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, forward synchronized stress (FSS) is proposed to further simulate the working conditions of switching thin-film transistors (TFTs) in active-matrix displays. The FSS induces tremendous device degradation in polycrystalline (poly-Si) TFTs, which is dominated by a dynamic hot carrier (HC) effect. For the first time, it is found that the dynamic HC effect is dependent on both rising time and falling time. Incorporated with TCAD simulations, the degradation mechanism is tentatively discussed. To alleviate such FSS-induced tremendous degradation, a bridged-grain structure, which can effectively suppress the peak value of lateral electric field by multiple reversed junctions, is applied in the active channel of poly-Si TFTs.
引用
收藏
页码：1467 / 1470
页数：4
相关论文
共 17 条
[1]  
[Anonymous], 2016, SID S
[2]   Negative bias temperature instability in low-temperature polycrystalline silicon thin-film transistors [J].
Chen, Chih-Yang ;
Lee, Jain-Wem ;
Wang, Shen-De ;
Shieh, Ming-Shan ;
Lee, Po-Hao ;
Chen, Wei-g Chen ;
Lin, Hsiao-Yi ;
Yeh, Kuan-Lin ;
Lei, Tan-Fu .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (12) :2993-3000
[3]   An AMOLED pixel circuit for high image quality of 1000ppi mobile displays in AR and VR applications [J].
Keum, Nack-Hyeon ;
Hong, Seong-Kwan ;
Chai, Chong Chul ;
Kwon, Oh-Kyong .
JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, 2018, 26 (02) :71-78
[4]  
Sze S. M., 2006, Physics of semiconductor devices, DOI DOI 10.1002/0470068329
[5]   Analysis of poly-Si TFT degradation under gate pulse stress using the slicing model [J].
Tai, Ya-Hsiang ;
Huang, Shih-Che ;
Chen, Chien-Kwen .
IEEE ELECTRON DEVICE LETTERS, 2006, 27 (12) :981-983
[6]   Degradation Mechanism of Poly-Si TFTs Dynamically Operated in OFF Region [J].
Tai, Ya-Hsiang ;
Huang, Shih-Che ;
Chen, Po-Ting .
IEEE ELECTRON DEVICE LETTERS, 2009, 30 (03) :231-233
[7]   Hot carrier analysis in low-temperature poly-Si TFTs using picosecond emission microscope [J].
Uraoka, Y ;
Hirai, N ;
Yano, H ;
Hatayama, T ;
Fuyuki, T .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (01) :28-35
[8]   Stress power dependent self-heating degradation of metal-induced laterally crystallized n-type polycrystalline silicon thin-film transistors [J].
Wang, Huaisheng ;
Wang, Mingxiang ;
Yang, Zhenyu ;
Hao, Han ;
Wong, Man .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (12) :3276-3284
[9]   Degradation behaviors of metal-induced laterally crystallized n-type polycrystalline silicon thin-film transistors under DC bias stresses [J].
Xue, Min ;
Wang, Mingxiang ;
Zhu, Zhen ;
Zhang, Dongli ;
Wong, Man .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (02) :225-232
[10]   OFF-State-Stress-Induced Ins ability in Switching Polycrystalline Silicon Thin-Film Transistors and Its Improvement by a Bridged-Grain Structure [J].
Zhang, Meng ;
Yan, Yan ;
Li, Guijun ;
Deng, Sunbin ;
Zhou, Wei ;
Chen, Rongsheng ;
Wong, Man ;
Kwok, Hoi-Sing .
IEEE ELECTRON DEVICE LETTERS, 2018, 39 (11) :1684-1687
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