Long Carrier Lifetime in 4H-SiC Epilayers using Chlorinated Precursors

被引：9
|
作者：
Shrivastava, A. [1 ]
Klein, P. B. [2 ]
Glaser, E. R. [2 ]
Caldwell, J. D. [2 ]
Bolotnikov, A. V. [1 ]
Sudarshan, T. S. [1 ]
机构：
[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA
[2] USN, Res Lab, Washington, DC 20375 USA
来源：
SILICON CARBIDE AND RELATED MATERIALS 2008 | 2009年 / 615-617卷
关键词：
4H-SiC; epilayers; carrier lifetime; Silane; dichlorosilane; photoluminescence (PL); PHOTOLUMINESCENCE; DEFECTS;
D O I：
10.4028/www.scientific.net/MSF.615-617.291
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work we report the measurement of minority carrier lifetimes using the time resolved photoluminescence technique. It was found that 4H-SiC homo-epilayers grown using chlorine-based precursors have longer carrier lifetimes if used in conjunction with a tantalum carbide coated (TaC-coated) graphite susceptor rather than a SiC-coated graphite susceptor. Longer carrier lifetimes were obtained by optimal combinations of precursor gases and susceptor type. The controllable variation in lifetime from 250 ns to 9.9 mu s was demonstrated.
引用
收藏
页码：291 / 294
页数：4
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