Long Carrier Lifetime in 4H-SiC Epilayers using Chlorinated Precursors

被引：9

作者：

Shrivastava, A. ^{[1
]}

Klein, P. B. ^{[2
]}

Glaser, E. R. ^{[2
]}

Caldwell, J. D. ^{[2
]}

Bolotnikov, A. V. ^{[1
]}

Sudarshan, T. S. ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

[2] USN, Res Lab, Washington, DC 20375 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2008 | 2009年 / 615-617卷

关键词：

4H-SiC; epilayers; carrier lifetime; Silane; dichlorosilane; photoluminescence (PL); PHOTOLUMINESCENCE; DEFECTS;

D O I：

10.4028/www.scientific.net/MSF.615-617.291

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work we report the measurement of minority carrier lifetimes using the time resolved photoluminescence technique. It was found that 4H-SiC homo-epilayers grown using chlorine-based precursors have longer carrier lifetimes if used in conjunction with a tantalum carbide coated (TaC-coated) graphite susceptor rather than a SiC-coated graphite susceptor. Longer carrier lifetimes were obtained by optimal combinations of precursor gases and susceptor type. The controllable variation in lifetime from 250 ns to 9.9 mu s was demonstrated.

引用

页码：291 / 294

页数：4

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