Computational study on the SiC sublimation growth

被引：7

作者：

Böttcher, K ^{[1
]}

Schulz, D ^{[1
]}

机构：

[1] Inst Kristallzuchtung Forsch Verbund Berlin EV, D-12489 Berlin, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 237卷 / 1-4 II期

关键词：

convection; diffusion; heat transfer; mass transfer; growth from vapor;

D O I：

10.1016/S0022-0248(01)02167-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Using a global two-dimensional model of SiC crystal growth by the Modified Lely method the temperature field of the furnace, the multi-species fluid flow between source and crystal, and the transport rate of the crystal building species at the gas-crystal interface are analysed. Finite element codes are used for the field computations while a free energy minimizing software is used to determine the thermodynamic equilibrium composition of the gas phase. The computed species transport rates meet the range of experimental values. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：1196 / 1201

页数：6

共 19 条

[1]

*ANS INC, 1994, THEOR MAN

[2]

Böttcher K, 2001, CRYST RES TECHNOL, V36, P719, DOI 10.1002/1521-4079(200108)36:7<719::AID-CRAT719>3.0.CO

[3]

2-7

[4] Computational study on the CVT of the ZnSe-I2 material system [J].

Böttcher, K ;

Hartmann, H ;

Siche, D .

JOURNAL OF CRYSTAL GROWTH, 2001, 224 (3-4) :195-203

[5]

*FLUENT INC, 1998, FIDAP 8 THEOR MAN

[6]

*GTT, GTT TECHN THERM

[7]

KADINSKI L, 1996, THESIS U ERLANGEN NU

[8] Radiation- and convection-driven transient heat transfer during sublimation growth of silicon carbide single crystals [J].

Klein, O ;

Philip, P ;

Sprekels, J ;

Wilmanski, K .

JOURNAL OF CRYSTAL GROWTH, 2001, 222 (04) :832-851

[9]

MULLER S, 1998, THESIS U ERLANGEN NU

[10]

Müller SG, 2000, MATER SCI FORUM, V338-3, P43, DOI 10.4028/www.scientific.net/MSF.338-342.43

← 1 2 →