Influence of annealing on polymeric precursor derived ZnO thin films on sapphire

被引：6

作者：

Choppali, Uma ^{[2
]}

Kougianos, Elias ^{[1
]}

Mohanty, Saraju P. ^{[1
]}

Gorman, Brian P. ^{[3
]}

机构：

[1] Univ N Texas, NanoSyst Design Lab NSDL, Denton, TX 76203 USA

[2] Collin Coll, Dept Math & Sci, Frisco, TX 75035 USA

[3] Colorado Sch Mines, Dept Met & Mat Engn, Colorado Ctr Adv Ceram, Golden, CO 80401 USA

来源：

THIN SOLID FILMS | 2013年 / 545卷

关键词：

ZnO; Thin films; Polymeric precursor; Annealing; ZnAl2O4; ZINC ALUMINATE SPINEL; ROOM-TEMPERATURE; SOLAR-CELLS; DEPOSITION; ZNAL2O4; PHOTOLUMINESCENCE; PERFORMANCE; SUBSTRATE; GROWTH; LAYER;

D O I：

10.1016/j.tsf.2013.07.085

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Zinc oxide (ZnO) thin films on c-sapphire substrates were synthesized by spin-coating aqueous polymeric precursors. The effects of annealing at 1000 degrees C on crystallinity, surface morphology, and optical properties of ZnO thin films, with varying thicknesses, were studied. Single-layered ZnO thin films are polycrystalline with wurtzite structure and preferentially oriented along the (002) plane. X-ray diffraction pattern also reveals the presence of spinel zinc aluminate (ZnAl2O4) peaks. ZnO films have highly faceted granular morphology. Multilayered ZnO films, annealed twice at 1000 degrees C, do not exhibit any ZnO peaks but only ZnAl2O4 peaks. Moreover, the surface morphology was smooth with ridges. These films do not exhibit the band gap or ultraviolet emission photoluminescence characteristics of ZnO. On annealing, there is an interfacial reaction between ZnO and sapphire resulting in ZnAl2O4. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：466 / 470

页数：5

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