Effect of oxygen pressure and laser fluence during pulsed laser deposition of TiO2 on MTOS (metal-TiO2-SiO2-Si) capacitor characteristics

被引：9

作者：

Paily, R

DasGupta, A

DasGupta, N ^{[1
]}

Ganguli, T

Kukreja, LM

机构：

[1] Indian Inst Technol, Dept Elect Engn, Madras 600036, Tamil Nadu, India

[2] Ctr Adv Technol, Laser Phys Div, Indore 452013, India

来源：

THIN SOLID FILMS | 2004年 / 462卷

关键词：

287 metal-oxide-semiconductor structures (MOS); 96; dielectrics; 495 titanium oxide; 91 laser deposition;

D O I：

10.1016/j.tsf.2004.05.020

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In the present work, we have studied the effect of different deposition parameters, e.g., laser fluence as well as the pressure of oxygen during Pulsed Laser Deposition (PLD) of TiO2 on the electrical characteristics of the dielectric layer in order to optimize the deposition process. It was observed that the reliability and electrical properties of the MTOS capacitors were not significantly affected by the variation in the laser fluence but improved considerably with a decrease in the oxygen pressure during PLD within the range of values used in our experiments. The optimized MTOS capacitors exhibit higher breakdown voltage, lower leakage current as well as better reliability performance compared to the reference MOS capacitor. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：57 / 62

页数：6

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