Direct measurement of carrier spin relaxation times in opaque solids using the specular inverse Faraday effect

被引：12

作者：

Bungay, AR ^{[1
]}

Popov, SV ^{[1
]}

Shatwell, IR ^{[1
]}

Zheludev, NI ^{[1
]}

机构：

[1] UNIV SOUTHAMPTON,DEPT PHYS,SOUTHAMPTON SO17 1BJ,HANTS,ENGLAND

来源：

PHYSICS LETTERS A | 1997年 / 234卷 / 05期

基金：

英国工程与自然科学研究理事会;

关键词：

spin relaxation; Faraday effect;

D O I：

10.1016/S0375-9601(97)00527-6

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Using a spectroscopic technique based on the transient specular inverse Faraday effect (SIFE) we found the electron spin relaxation time in bulk GaAs at room temperature to be 11 +/- 1 ps. The hole spin dynamics gives a SIFE signal of the opposite sign and may be resolved in the time-domain. (C) 1997 Published by Elsevier Science B.V.

引用

页码：379 / 383

页数：5

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