Growth and properties of Pb(Zr0.92Ti0.08)O3 thin films

被引：0
作者：
Boerasu, I
Pintilie, L
Gomes, MJM
Pereira, M
机构：
[1] Univ Minho, CFUM, P-4710057 Braga, Portugal
[2] NIMP, Bucharest 76900, Romania
来源：
INTEGRATED FERROELECTRICS | 2004年 / 62卷
关键词：
ferroelectric; thin films; sol-gel; pyroelectric;
D O I：
10.1080/10584580490460556
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Lead zirconate-titanate (PZT) thin films with Zr/Ti ratio of 92/8 were deposited by sol-gel on Pt(111)-coated Si(100) and single crystal MgO(100) substrates. The films crystallize differently on the two type of substrates: in case of the films deposited on Pt the perovskite structure is established only after oxygen annealing, while for the films deposited on MgO annealing in air is enough. The films are polycrystalline with some preferred orientation that is substrate dependent. Average values of 2.1 muC/cm(2) and 78 kV/cm were obtained for remnant polarization and coercive field, respectively. The I-V characteristic at low to medium voltages is dominated by field enhanced Schottky emission, with Ln(J)similar to(V + V-bi)(1/4) dependence of the current density. A value of about 3.85 eV was estimated for the band-gap from optical measurements.
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页码：83 / 87
页数：5
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