SiGe nano-heteroepitaxy on Si and SiGe nano-pillars

被引：8

作者：

Mastari, M. ^{[1
]}

Charles, M. ^{[1
]}

Bogumilowicz, Y. ^{[1
]}

Thai, Q. M. ^{[1
]}

Pimenta-Barros, P. ^{[1
]}

Argoud, M. ^{[1
]}

Papon, A. M. ^{[1
]}

Gergaud, P. ^{[1
]}

Landru, D. ^{[2
]}

Kim, Y. ^{[2
]}

Hartmann, J. M. ^{[1
]}

机构：

[1] Univ Grenoble Alpes, CEA, LETI, F-38000 Grenoble, France

[2] SOITEC, Parc Technol Fontaines, F-38190 Bernin, France

来源：

NANOTECHNOLOGY | 2018年 / 29卷 / 27期

关键词：

nano-heteroepitaxy; reduced pressure-chemical vapour deposition; selective growth; patterned substrate; elastic relaxation; SiGe; crystal defects; CHEMICAL-VAPOR-DEPOSITION; GROWTH-KINETICS; PRESSURE; DEPENDENCE; MOBILITY; DEFECTS; EPITAXY;

D O I：

10.1088/1361-6528/aabdca

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this paper, SiGe nano-heteroepitaxy on Si and SiGe nano-pillars was investigated in a 300 mm industrial reduced pressure-chemical vapour deposition tool. An integration scheme based on diblock copolymer patterning was used to fabricate nanometre-sized templates for the epitaxy of Si and SiGe nano-pillars. Results showed highly selective and uniform processes for the epitaxial growth of Si and SiGe nano-pillars. 200 nm thick SiGe layers were grown on Si and SiGe nano-pillars and characterised by atomic force microscopy, x-ray diffraction and transmission electron microscopy. Smooth SiGe surfaces and full strain relaxation were obtained in the 650 degrees C-700 degrees C range for 2D SiGe layers grown either on Si or SiGe nano-pillars.

引用

页数：10

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