Effect of Na adsorption on the structural and electronic properties of Si(111)√3 x √3-Au surface

被引：8

作者：

Bondarenko, L. V. ^{[1
,2
]}

Matetskiy, A. V. ^{[1
,2
]}

Yakovlev, A. A. ^{[1
,2
]}

Tupchaya, A. Y. ^{[1
,2
]}

Gruznev, D. V. ^{[1
,2
]}

Ryzhkova, M. V. ^{[1
,2
]}

Tsukanov, D. A. ^{[1
,2
]}

Borisenko, E. A. ^{[1
]}

Chukurov, E. N. ^{[1
]}

Denisov, N. V. ^{[1
,2
]}

Vilkov, O. ^{[3
]}

Vyalikh, D. V. ^{[3
,4
]}

Zotov, A. V. ^{[1
,2
,5
]}

Saranin, A. A. ^{[1
,2
]}

机构：

[1] Inst Automat & Control Proc FEB RAS, Vladivostok 690041, Russia

[2] Far Eastern Fed Univ, Sch Nat Sci, Vladivostok 690950, Russia

[3] St Petersburg State Univ, St Petersburg 198504, Russia

[4] Tech Univ Dresden, Inst Solid State Phys, D-01062 Dresden, Germany

[5] Vladivostok State Univ Econ & Serv, Dept Elect, Vladivostok 690600, Russia

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2014年 / 26卷 / 05期

基金：

俄罗斯基础研究基金会;

关键词：

atom-solid interactions; electronic band structure; scanning tunneling microscopy; angle-resolved photoemission; surface reconstructions; INITIO MOLECULAR-DYNAMICS; TOTAL-ENERGY CALCULATIONS; TRANSITION; PLANE; SEMICONDUCTORS; STATE; GAS;

D O I：

10.1088/0953-8984/26/5/055009

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Adsorption of similar to 0.1 ML of Na onto the Si(111)root 3 x root 3-Au surface held at 300 degrees C has been found to induce pronounced changes in its structural and electronic properties. Domain wall networks, characteristic of the pristine surface, are removed completely, leading to the formation of a highly ordered homogeneous surface. The original atomic arrangement of the Si(111)root 3 x root 3-Au is preserved and Na atoms occupy T-4 adsorption sites at the centers of surface Si trimers. Upon Na adsorption, a pronounced metallic S-1 surface-state band develops. It is characterized by a large spin splitting (momentum splitting at the Fermi level Delta k(parallel to) = 0.027 angstrom(-1) and consequent energy splitting Delta E-F = 110 meV), large electron filling (on the order of 0.5 electrons per root 3 x root 3 unit cell) and small effective electron mass of (0.028 +/- 0.006)m(e). The natural consequence of the latter properties is a high surface conductivity of the Si(111)root 3 x root 3-(Au, Na) surface.

引用

页数：7

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