Monte Carlo study of the early growth stages of 3C-SiC on misoriented <11-20> and <1-100> 6H-SiC substrates

被引：3
作者：
Camarda, M. [1 ]
La Magna, A. [1 ]
La Via, F. [1 ]
机构：
[1] IMM CNR, I-95121 Catania, Italy
来源：
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 | 2014年 / 778-780卷
关键词：
heteroepitaxial growths; surface morphology; polytypes; Monte Carlo simulations; CHLORIDE-BASED CVD; SILICON-CARBIDE; HOMOEPITAXIAL GROWTH; DEFECT FORMATION; STRESS-FIELDS; MECHANISM; EVOLUTION; FABRICATION; CRYSTAL; MOTION;
D O I：
10.4028/www.scientific.net/MSF.778-780.238
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
In this paper we used three dimensional kinetic Monte Carlo simulations on super-lattices to study the hetero-polytypical growth of cubic silicon carbide polytype (3C-SiC) on hexagonal 6H-SiC substrates with miscuts towards the <11-20> and <1-100> directions. We analyze the grown film for different miscut angles (in the range 2 degrees to 12 degrees degrees) and different growth rates, finding that substrates with miscut of 3-4 degrees degrees towards the <1-100> direction should be the best choice for the growth of high quality cubic epitaxial films, being able to promote, given a suitable pre-growth treatment to induce step bunching, the nucleation of single domain 3C-SiC films.
引用
收藏
页码：238 / 242
页数：5
相关论文
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