Forming-Free Resistive Switching in Multiferroic BiFeO3 thin Films with Enhanced Nanoscale Shunts

被引：53

作者：

Ou, Xin ^{[1
]}

Shuai, Yao ^{[2
]}

Luo, Wenbo ^{[2
]}

Siles, Pablo F. ^{[3
,6
]}

Koegler, Reinhard ^{[1
]}

Fiedler, Jan ^{[1
]}

Reuther, Helfried ^{[1
]}

Zhou, Shengqiang ^{[1
]}

Huebner, Rene ^{[1
]}

Facsko, Stefan ^{[1
]}

Helm, Manfred ^{[1
]}

Mikolajick, Thomas ^{[4
,5
]}

Schmidt, Oliver G. ^{[3
,6
]}

Schmidt, Heidemarie ^{[3
,6
]}

机构：

[1] Helmholtz Zentrum Dresden Rossendorf HZDR eV, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany

[2] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

[3] Tech Univ Chemnitz, D-09107 Chemnitz, Germany

[4] Tech Univ Dresden, Inst Semicond & Microsyst, D-01187 Dresden, Germany

[5] Namlab GmbHNothnitzer, D-01187 Dresden, Germany

[6] IFW Dresden, Inst Integrat Nanosci, D-01069 Dresden, Germany

来源：

ACS APPLIED MATERIALS & INTERFACES | 2013年 / 5卷 / 23期

关键词：

resistive switching; Ar irradiation; shunting; oxygen vacancy; current retention; BiFeO3; TRANSITION;

D O I：

10.1021/am404144c

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A controlled shunting of polycrystalline oxide thin films on the nanometer length scale opens the door to significantly modify their transport properties. In this paper, the low energy Ar+ irradiation induced shunting effect of forming-free, non-volatile resistive switching in polycrystalline BiFeO3 thin film capacitor-like structures with macroscopic bottom and top contacts was investigated. Oxygen atoms at the BiFeO3 surface are preferentially sputtered by Ar+ ion irradiation and oxygen vacancies and a metallic Bi phase are formed at the surface of the BiFeO3 thin film before deposition of the top contacts. A phenomenological model is that of nanoscale shunt resistors formed in parallel to the actual BiFeO3 thin film capacitor-like structure. This model fits the noticeable increase of the retention stability and current density after irradiation. The formation of stable and conductive shunts is further evidenced by conductive atomic force microscopy measurements.

引用

页码：12764 / 12771

页数：8

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