Quasi-Fermi Level Pinning in Interband Cascade Lasers

被引:6
作者
Lin, Yuzhe [1 ,2 ,3 ]
Li, Lu [3 ,4 ]
Huang, Wenxiang [3 ,5 ]
Yang, Rui Q. [3 ]
Gupta, James A. [6 ]
Zheng, Wanhua [1 ]
机构
[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
[3] Univ Oklahoma, Sch Elect & Comp Engn, Norman, OK 73019 USA
[4] Lumentum Operat LLC, Milpitas, CA 95035 USA
[5] Univ Oklahoma, Dept Phys & Astron, Norman, OK 73019 USA
[6] Natl Res Council Canada, Ottawa, ON K1A 0R6, Canada
基金
美国国家科学基金会;
关键词
Interband cascade laser; quasi-Fermi level pinning; semiconductor heterostructure; quantum well; EFFICIENCY; POWER; TEMPERATURE;
D O I
10.1109/JQE.2020.3003081
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A systematic study of the quasi-Fermi level pinning in various interband cascade lasers (ICLs) is reported. These ICLs, with either type-II or type-I quantum well active regions, cover the mid-infrared wavelength range from 3 to 6 mu m and can operate in continuous wave (cw) at room temperatures and above. It was found that the quasi-Fermi level can be pinned in many ICLs over a wide range of temperature, which is associated with an observed drop of differential resistance at threshold. For the first time, the quasi-Fermi level pinning was demonstrated in ICLs at room temperature. The temperature dependence of the quasi-Fermi level pinning in ICLs was also examined. A pinning factor is introduced to evaluate how well the quasi-Fermi level is pinned in ICLs with different configurations and lasing wavelengths. Also, it was found that the quasi-Fermi level pinning disappeared in some ICLs where an obvious drop of differential resistance could not be observed at the threshold. Furthermore, the quasi-Fermi level pinning was found to be correlated to the doping concentration in electron injectors in ICLs. Possible mechanisms and implications related to the quasiFermi level pinning are discussed.
引用
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页数:10
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