Simulation of carbon nanotube based p-n junction diodes

被引：19
|
作者：
Li, Jingqi
Zhang, Qing
Chan-Park, Mary B.
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Ctr Microelect, Singapore 639798, Singapore
[2] Nanyang Technol Univ, Sch Chem & Biomed Engn, Singapore 639798, Singapore
来源：
CARBON | 2006年 / 44卷 / 14期
关键词：
carbon nanotubes; electrical (electronic) properties; TRANSISTORS;
D O I：
10.1016/j.carbon.2006.04.041
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Taking advantage of the unique characteristics of an ambipolar carbon nanotube field effect transistor (CNTFET), a 'p-n junction' is simulated along the single-walled carbon nanotube channel using two separate gates close to the source and drain of the CNTFET, respectively. The current-voltage characteristics of the double-gated CNTFET are calculated using a semiclassical method based on the Schottky barrier field effect transistor mechanism. The calculation results show a good rectification performance of the p-n junction. (c) 2006 Elsevier Ltd. All rights reserved.
引用
收藏
页码：3087 / 3090
页数：4
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