Structural, electrical, and piezoelectric properties of ZnO films on SiC-6H substrates

被引：8

作者：

Chen, Ying ^{[1
]}

Saraf, Gaurav ^{[1
]}

Reyes, Pavel Ivanoff ^{[1
]}

Duan, Ziqing ^{[1
]}

Zhong, Jian ^{[1
]}

Lu, Yicheng ^{[1
]}

机构：

[1] Rutgers State Univ, Dept Elect & Comp Engn, Piscataway, NJ 08854 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2009年 / 27卷 / 03期

关键词：

electrical conductivity; MOCVD; piezoelectric thin films; semiconductor epitaxial layers; semiconductor heterojunctions; silicon compounds; surface acoustic waves; wide band gap semiconductors; X-ray diffraction; zinc compounds; SILICON-CARBIDE; SENSOR;

D O I：

10.1116/1.3137014

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Epitaxial ZnO films were grown on c-plane SiC-6H substrates using metal-organic chemical vapor deposition. X-ray diffraction coupled theta-2 theta and phi-scans show that the n-type ZnO films have c-axis orientation and in-plane registry with the n-type 6H-SiC substrates. This isotype ZnO/SiC heterojunction shows rectifying characteristics. Electrical measurements exhibit that the reverse current is in the picoampere (10(-12)-10(-10) A) range under the reverse bias of less than 5 V, the on-off current ratio is similar to 10(7), and the ideality factor is similar to 1.23. The surface acoustic wave characteristics in the structure consisting of a piezoelectric ZnO and a semi-insulating SiC-6H substrate were also studied. The structure shows promise for high frequency and low loss rf applications.

引用

页码：1631 / 1634

页数：4

共 18 条

[1] MATRIX-METHODS APPLIED TO ACOUSTIC-WAVES IN MULTILAYERS [J].

ADLER, EL .

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 1990, 37 (06) :485-490

[2] Band offset measurements of ZnO/6H-SiC heterostructure system [J].

Alivov, Ya. I. ;

Xiao, B. ;

Fan, Q. ;

Morkoc, H. ;

Johnstone, D. .

APPLIED PHYSICS LETTERS, 2006, 89 (15)

[3] Photoresponse of n-ZnO/p-SiC heterojunction diodes grown by plasma-assisted molecular-beam epitaxy -: art. no. 241108 [J].

Alivov, YI ;

Özgür, Ü ;

Dogan, S ;

Johnstone, D ;

Avrutin, V ;

Onojima, N ;

Liu, C ;

Xie, J ;

Fan, Q ;

Morkoç, H .

APPLIED PHYSICS LETTERS, 2005, 86 (24) :1-3

[4] Infrared dielectric functions and phonon modes of high-quality ZnO films [J].

Ashkenov, N ;

Mbenkum, BN ;

Bundesmann, C ;

Riede, V ;

Lorenz, M ;

Spemann, D ;

Kaidashev, EM ;

Kasic, A ;

Schubert, M ;

Grundmann, M ;

Wagner, G ;

Neumann, H ;

Darakchieva, V ;

Arwin, H ;

Monemar, B .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (01) :126-133

[5]

Auld B.A., 1990, ACOUSTIC FIELDS WAVE, V1

[6]

BELOV I, 2004, P 5 INT C THER UNPUB, V1, P475

[7] Silicon carbide photodiode sensor for combustion control [J].

Brown, DM ;

Fedison, JB ;

Hibshman, JR ;

Kretchmer, JW ;

Lombardo, L ;

Matocha, KS ;

Sandvik, PM .

IEEE SENSORS JOURNAL, 2005, 5 (05) :983-988

[8]

Carlotti G., 1987, P IEEE ULTR S, P295

[9] The experimental and theoretical characterization of the SAW propagation properties for zinc oxide films on silicon carbide [J].

Didenko, IS ;

Hickernell, FS ;

Naumenko, NF .

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 2000, 47 (01) :179-187

[10] PIEZOELECTRIC MATERIALS FOR ACOUSTIC-WAVE APPLICATIONS [J].

GUALTIERI, JG ;

KOSINSKI, JA ;

BALLATO, A .

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 1994, 41 (01) :53-59

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