Initial stage of nitridation on Si(100) surface using low-energy nitrogen ion implantation

被引：6

作者：

Kim, Ki-jeong

Kang, Tai-Hee

Ihm, Kyuwook

Jeon, Chulho

Hwang, Chan-Cuk

Kim, Bongsoo

机构：

[1] Pohang Univ Sci & Technol, POSTECH, Pohang Accelerator Lab, Pohang 790784, Kyungbuk, South Korea

[2] Sungkyunkwan Univ, Dept Phys, Suwon 440746, South Korea

[3] Pohang Univ Sci & Technol, Dept Phys, Pohang 790784, Kyungbuk, South Korea

[4] Korea Adv Inst Sci & Technol, Dept Chem, Taejon 305701, South Korea

[5] Korea Adv Inst Sci & Technol, Sch Mol Sci BK21, Taejon 305701, South Korea

来源：

SURFACE SCIENCE | 2006年 / 600卷 / 17期

关键词：

silicon nitride; synchrotron radiation photoemission spectroscopy; ion implantation;

D O I：

10.1016/j.susc.2006.07.015

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The initial stage of the thermal nitridation on Si(10 0)-2 x 1 surface with the low-energy nitrogen ion (200 eV) implantation was studied by photoemission spectroscopy (PES). The formation of nitride was shown the different characteristics depending on the annealing temperature. The disordered surface at room temperature was changed to 2 x I periodicity with the low-energy electron diffraction (LEED) as increasing the nitridation temperature. By decomposition of Si 2p spectrum, we can identify the three subnitrides (Si1+, Si2+, and Si3+). By changing the take-off angle of the Si 2p, we can increase surface sensitivity and estimate that Si1+, Si2+ and Si3+ are the interface states. (c) 2006 Published by Elsevier B.V.

引用

页码：3496 / 3501

页数：6