Electrical properties of Al-doped ZnO films fabricated by a hot-cathode plasma sputtering method

被引：1

作者：

Kono, Akihiko ^{[1
]}

Shoji, Fumiya ^{[1
]}

机构：

[1] Kyushu Kyoritsu Univ, Grad Sch Engn, Fukuoka 8078585, Japan

来源：

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2009年 / 162卷 / 03期

关键词：

Zinc oxide; Sputtering; Thin films; Plasma processing; Oxides; Electrical measurements; OPTICAL-PROPERTIES; MAGNETRON; BIAS;

D O I：

10.1016/j.mseb.2009.04.002

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A hot-cathode plasma Sputtering technique Was used to fabricate highly transparent and conducting aluminum-doped zinc oxide (AZO) films oil glass substrates from disk shaped AZO (Al2O3: 5 wt.% and 2 wt.%) targets. Using a target voltage V-T = -200 V and plasma excitation pressure P-Ar = 1.5 x 10(-3) Tort, the lowest resistivity of 4.0 x 10(-4) Omega cm was obtained at 400 nm with a carrier density of 8.7 x 10(20) cm(-3) and a Hall mobility of 17 cm(2)/V s. The analyzed structural properties of these films revealed that this lower resistivity was due to a decrease in the lattice spacing d((0) (0) (2)) of the (0 0 2) plane parallel to the substrate surface. This decrease in lattice spacing was presumably caused by oxygen vacancies acting as an effective source of carrier electrons. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：167 / 172

页数：6

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