Magnetic properties of Co-N films deposited by ECR nitrogen/argon plasma with DC negative-biased Co target

被引：6
|
作者：
Li, H. [1 ]
Zhang, Y. C. [1 ]
Yang, K. [1 ]
Liu, H. X. [1 ]
Zhu, X. D. [1 ]
Zhou, H. Y. [1 ]
机构：
[1] Univ Sci & Technol China, Dept Modern Phys, Hefei 230026, Anhui, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2017年 / 406卷
基金：
中国国家自然科学基金;
关键词：
Co-N films; ECR plasma; Magnetic properties; THIN-FILMS; CRYSTAL-STRUCTURE; NITRIDES; COBALT; PHASE;
D O I：
10.1016/j.apsusc.2017.02.122
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
By introducing DC negative-biased Co target in the Electron Cyclotron Resonance (ECR) nitrogen/argon plasma, the Co-N films containing Co4N phase were synthesized on Si(100) substrate. Effects of processing parameters on magnetic properties of the films are investigated. It is found that magnetic properties of Co-N films vary with Na/Ar flow ratio, substrate temperature, and target biasing voltage. The saturation magnetization M-s, decreased by increasing the N-2/Ar gas flow ratio or decreasing target biasing voltage, while the coercive field H-c increased, which is ascribed to the variation of relative concentration for Nor Co active species in plasma vapor. The magnetic properties present complex dependency with growth temperature, which is related to the atom mobility on the substrate affected by the growth temperature. This study exhibits a potential of ECR plasma chemical vapor deposition to synthesize the interstitial compounds and tune magnetic properties of films. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码：110 / 114
页数：5
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