Enhancement of the Seebeck coefficient and power factor in gated silicene superlattices induced by aperiodicity

被引:8
作者
Guzman, E. J. [1 ]
Molina-Valdovinos, S. [1 ]
Oubram, O. [2 ]
Rodriguez-Vargas, I [1 ]
机构
[1] Univ Autonoma Zacatecas, Unidad Acad Ciencia & Tecnol Luz & Mat, Carretera Zacatecas Guadalajara Km 6, Zacatecas 98160, Zacatecas, Mexico
[2] Univ Autonoma Estado Morelos, Fac Ciencias Quim & Ingn, Av Univ 1001, Cuernavaca 62209, Morelos, Mexico
关键词
THERMOELECTRIC PROPERTIES; THERMAL-CONDUCTIVITY; SEMICONDUCTOR-LIKE; QUASI-CRYSTALS; GRAPHENE; TRANSPORT; FIGURE;
D O I
10.1063/5.0030209
中图分类号
O59 [应用物理学];
学科分类号
摘要
This paper theoretically investigates the impact of aperiodic sequences in the ballistic transport and thermoelectric effect in silicene gated superlattices. In our analysis, we have implemented the well-known Fibonacci, Thue-Morse, and triadic Cantor type sequences. The transfer matrix technique and the Landauer-Butikker formalism are used to calculate the transmission probability and the conductance, respectively. The Cutler-Mott formula is employed to estimate the Seebeck coefficient, and the thermoelectric power factor is then obtained. We found that the transmission minibands of aperiodic superlattices exhibit a much more fragmented structure in comparison to that reported in the periodic case. Consequently, the conductance curve presents a more pronounced oscillating shape, which improves the thermoelectric properties. In particular, the Seebeck coefficient has reached values up to 78.2mV/K for Fibonacci, 233.0mV/K for Thue-Morse, and 436.3mV/K for Cantor. In addition, the power factor has been substantially increased, reaching peaks of approximately 8.2, 50.2, and 2.1nW/K 2 for the mentioned sequences, respectively. The best results were obtained for s p i n d o w n ( s p i n u p) charge carriers in the K ( K ') valley. Besides, an additional improvement is obtained by considering superior generations of the aperiodic sequences. Finally, our findings are supported through the redistribution of the density of the states, which is induced by the aperiodicity of the nanostructure as well as by the low-dimensionality of the thermoelectric device.
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页数:19
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