Detection of As2O3 arsenic oxide on GaAs surface by Raman scattering

被引：30

作者：

Quagliano, LG ^{[1
]}

机构：

[1] CNR, IMAI, Area Ric Roma, I-00016 Monterotondo Scalo, Rome, Italy

来源：

APPLIED SURFACE SCIENCE | 2000年 / 153卷 / 04期

关键词：

D O I：

10.1016/S0169-4332(99)00355-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

GaAs samples after wet chemical etching in nitric acid have been investigated for the first time by Raman spectroscopy. The GaAs surface prepared by this chemical etching results in a rough surface structure with an intrinsic chemically formed oxide film. The Raman scattering data suggest that the oxide layer is primarily composed of As2O3 in the crystalline form of arsenolite. This oxide film has been found to be subjected to a tensile stress. No experimental Raman observation of this kind of As2O3 arsenic oxide on oxided GaAs surfaces has been reported yet. No trace of amorphous arsenic and of elemental As has been detected. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：240 / 244

页数：5

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