Structural and optical properties of axial silicon-germanium nanowire heterojunctions

被引：9

作者：

Wang, X. ^{[1
]}

Tsybeskov, L. ^{[1
]}

Kamins, T. I. ^{[2
]}

Wu, X. ^{[3
]}

Lockwood, D. J. ^{[3
]}

机构：

[1] New Jersey Inst Technol, ECE Dept, Newark, NJ 07102 USA

[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[3] CNR, Ottawa, ON K1A 0R6, Canada

来源：

JOURNAL OF APPLIED PHYSICS | 2015年 / 118卷 / 23期

关键词：

STRANSKI-KRASTANOV GROWTH; RAMAN-SCATTERING; HIGH-PERFORMANCE; ROOM-TEMPERATURE; SI/GE NANOSTRUCTURES; GE NANOWIRES; STRAINED-SI; HETEROSTRUCTURES; PHOTODETECTORS; ALLOYS;

D O I：

10.1063/1.4937345

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Detailed studies of the structural and optical properties of axial silicon-germanium nanowire heterojunctions show that despite the 4.2% lattice mismatch between Si and Ge they can be grown without a significant density of structural defects. The lattice mismatch induced strain is partially relieved due to spontaneous SiGe intermixing at the heterointerface during growth and lateral expansion of the Ge segment of the nanowire. The mismatch in Ge and Si coefficients of thermal expansion and low thermal conductivity of Si/Ge nanowire heterojunctions are proposed to be responsible for the thermally induced stress detected under intense laser radiation in photoluminescence and Raman scattering measurements. (C) 2015 AIP Publishing LLC.

引用

页数：8

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