Dose Rate Effects on Bipolar Components

被引：0

作者：

Toscano, F. ^{[1
]}

Ouellet, A. ^{[2
]}

Tilhac, F. ^{[3
]}

Lagarrigue, T. ^{[3
]}

机构：

[1] STMicroelect Co, IMS R&D Dept, Stradale Primosole 50, I-95121 Catania, Italy

[2] STMicroelect Co, Burlington, MA 01803 USA

[3] Hirex Engn Co Alter Technol, TESTLAB Dept, F-31520 Ramonville St Agne, France

来源：

2013 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW) | 2013年

关键词：

Bipolar transistors; ELDRs; LDR; HDR; Radiation; TID;

D O I：

暂无

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

The TID Co60 Dose rate effects have been examined in bipolar transistors at high and low dose rates. The aim of the radiation tests is to study the ELDRs on NPN and SPNP elementary transistors.

引用

页数：6

共 3 条

[1] PHYSICAL-MECHANISMS CONTRIBUTING TO ENHANCED BIPOLAR GAIN DEGRADATION AT LOW-DOSE RATES
FLEETWOOD, DM
KOSIER, SL
NOWLIN, RN
SCHRIMPF, RD
REBER, RA
DELAUS, M
WINOKUR, PS
WEI, A
COMBS, WE
PEASE, RL
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1994, 41 (06) : 1871 - 1883
[2] ELDRS in Bipolar Linear Circuits: A Review
Pease, Ronald L.
Schrimpf, Ronald D.
Fleetwood, Daniel M.
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2009, 56 (04) : 1894 - 1908
[3] Annealing behavior of linear bipolar devices with enhanced low-dose-rate sensitivity
Shaneyfelt, MR
Schwank, JR
Fleetwood, DM
Pease, RL
Felix, JA
Dodd, PE
Maher, MC
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (06) : 3172 - 3177

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