Properties of memristor in RLC circuit and diode circuit

被引:3
作者
Wang Tian-Shu [1 ]
Zhang Rui-De [1 ]
Guan Zhe [1 ]
Ba Ke [1 ]
Zu Yun-Xiao [1 ]
机构
[1] Beijing Univ Posts & Telecommun, Sch Elect Engn, Beijing 100876, Peoples R China
关键词
memristor; RLC circuit; diode circuit; mathematic model;
D O I
10.7498/aps.63.178101
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The study focuses on studying the basic properties of memristors in RLC circuit and diode circuit. Mathematical models are built up separately for memristors in the two types of circuits. In order to understand the influence of the model's parameters on the circuits' properties, simulations are made for the two mathematical models. The model's parameters include properties such as the capacitance, resistance and inductance. In the final part of the paper, we give and make conclusions based on the simulation results.
引用
收藏
页数:8
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