The study focuses on studying the basic properties of memristors in RLC circuit and diode circuit. Mathematical models are built up separately for memristors in the two types of circuits. In order to understand the influence of the model's parameters on the circuits' properties, simulations are made for the two mathematical models. The model's parameters include properties such as the capacitance, resistance and inductance. In the final part of the paper, we give and make conclusions based on the simulation results.
机构:
Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USAUniv Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
Di Ventra, Massimiliano
;
Pershin, Yuriy V.
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机构:
Univ S Carolina, Dept Phys & Astron, Columbia, SC 29208 USA
Univ S Carolina, USC Nanoctr, Columbia, SC 29208 USAUniv Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
Pershin, Yuriy V.
;
Chua, Leon O.
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h-index: 0
机构:
Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USAUniv Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
机构:
Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USAUniv Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
Di Ventra, Massimiliano
;
Pershin, Yuriy V.
论文数: 0引用数: 0
h-index: 0
机构:
Univ S Carolina, Dept Phys & Astron, Columbia, SC 29208 USA
Univ S Carolina, USC Nanoctr, Columbia, SC 29208 USAUniv Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
Pershin, Yuriy V.
;
Chua, Leon O.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USAUniv Calif San Diego, Dept Phys, La Jolla, CA 92093 USA