ZnO ultraviolet random laser diode on metal copper substrate

被引：44

作者：

Liu, C. Y. ^{[1
]}

Xu, H. Y. ^{[1
]}

Sun, Y. ^{[1
]}

Ma, J. G. ^{[1
]}

Liu, Y. C. ^{[1
]}

机构：

[1] NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Key Lab UV Light Emitting Mat & Technol, Minist Educ, Changchun 130024, Peoples R China

来源：

OPTICS EXPRESS | 2014年 / 22卷 / 14期

关键词：

LIGHT-EMITTING-DIODES; LIFT-OFF; GAN; ELECTROLUMINESCENCE; NANOWIRES; SAPPHIRE;

D O I：

10.1364/OE.22.016731

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Direct fabrication of light emitting devices on metal substrates is highly desirable due to their advantages of high thermal conductivity and light reflection. In this work, we demonstrated a feasibility of directly fabricating ZnO-based ultraviolet laser diodes on metal substrates. By introducing an anti-oxidation buffer layer, Au/MgO/ZnO metal-insulator-semiconductor heterojunction devices are successfully fabricated on the copper substrate. Electrically pumped ultraviolet random lasing was achieved from ZnO active layer. The use of copper substrate offers some merits, including lower thermal effect and higher stability of emission wavelength. (C) 2014 Optical Society of America

引用

页码：16731 / 16737

页数：7

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