Metal-Insulator Transition in Graphene on Boron Nitride

被引：15

作者：

Titov, M. ^{[1
]}

Katsnelson, M. I. ^{[1
]}

机构：

[1] Radboud Univ Nijmegen, Inst Mol & Mat, NL-6525 AJ Nijmegen, Netherlands

来源：

PHYSICAL REVIEW LETTERS | 2014年 / 113卷 / 09期

关键词：

QUANTUM HALL TRANSITION; DIRAC FERMIONS; SCALING LIMITS; PERCOLATION; HETEROSTRUCTURES; SUPERLATTICES; LOCALIZATION; DIMENSIONS; FIELD;

D O I：

10.1103/PhysRevLett.113.096801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Electrons in graphene aligned with hexagonal boron nitride are modeled by Dirac fermions in a correlated random-mass landscape subject to a scalar-and vector-potential disorder. We find that the system is insulating in the commensurate phase since the average mass deviates from zero. At the transition the mean mass is vanishing and electronic conduction in a finite sample can be described by a critical percolation along zero-mass lines. In this case graphene at the Dirac point is in a critical state with the conductivity root 3e(2)/h. In the incommensurate phase the system behaves as a symplectic metal.

引用

页数：5

共 49 条

[1] Giant Nonlocality Near the Dirac Point in Graphene [J].

Abanin, D. A. ;

Morozov, S. V. ;

Ponomarenko, L. A. ;

Gorbachev, R. V. ;

Mayorov, A. S. ;

Katsnelson, M. I. ;

Watanabe, K. ;

Taniguchi, T. ;

Novoselov, K. S. ;

Levitov, L. S. ;

Geim, A. K. .

SCIENCE, 2011, 332 (6027) :328-330

[2] Nonstandard symmetry classes in mesoscopic normal-superconducting hybrid structures [J].

Altland, A ;

Zirnbauer, MR .

PHYSICAL REVIEW B, 1997, 55 (02) :1142-1161

[3] Absence of a metallic phase in charge-neutral graphene with a random gap [J].

Bardarson, J. H. ;

Medvedyeva, M. V. ;

Tworzydlo, J. ;

Akhmerov, A. R. ;

Beenakker, C. W. J. .

PHYSICAL REVIEW B, 2010, 81 (12)

[4] Hausdorff dimensions for SLE6 [J].

Beffara, V .

ANNALS OF PROBABILITY, 2004, 32 (3B) :2606-2629

[5]

Bokdam M., 2013, THESIS U TWENTE

[6] Band gaps in incommensurable graphene on hexagonal boron nitride [J].

Bokdam, Menno ;

Amlaki, Taher ;

Brocks, Geert ;

Kelly, Paul J. .

PHYSICAL REVIEW B, 2014, 89 (20)

[7] Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures [J].

Britnell, L. ;

Gorbachev, R. V. ;

Jalil, R. ;

Belle, B. D. ;

Schedin, F. ;

Mishchenko, A. ;

Georgiou, T. ;

Katsnelson, M. I. ;

Eaves, L. ;

Morozov, S. V. ;

Peres, N. M. R. ;

Leist, J. ;

Geim, A. K. ;

Novoselov, K. S. ;

Ponomarenko, L. A. .

SCIENCE, 2012, 335 (6071) :947-950

[8] Linking numbers for self-avoiding loops and percolation: Application to the spin quantum Hall transition [J].

Cardy, J .

PHYSICAL REVIEW LETTERS, 2000, 84 (16) :3507-3510

[9] Limits on Charge Carrier Mobility in Suspended Graphene due to Flexural Phonons [J].

Castro, Eduardo V. ;

Ochoa, H. ;

Katsnelson, M. I. ;

Gorbachev, R. V. ;

Elias, D. C. ;

Novoselov, K. S. ;

Geim, A. K. ;

Guinea, F. .

PHYSICAL REVIEW LETTERS, 2010, 105 (26)

[10] The electronic properties of graphene [J].

Castro Neto, A. H. ;

Guinea, F. ;

Peres, N. M. R. ;

Novoselov, K. S. ;

Geim, A. K. .

REVIEWS OF MODERN PHYSICS, 2009, 81 (01) :109-162

← 1 2 3 4 5 →