Quantum Corrections Based on the 2-D Schrodinger Equation for 3-D Finite Element Monte Carlo Simulations of Nanoscaled FinFETs

被引：36

作者：

Lindberg, Jari ^{[1
]}

Aldegunde, Manuel ^{[1
]}

Nagy, Daniel ^{[1
]}

Dettmer, Wulf G. ^{[1
]}

Kalna, Karol ^{[1
]}

Garcia-Loureiro, Antonio Jesus ^{[2
]}

Peric, Djordje ^{[1
]}

机构：

[1] Swansea Univ, Coll Engn, Swansea SA2 8PP, W Glam, Wales

[2] Univ Santiago de Compostela, Ctr Invest Tecnoloxias Informac, Santiago De Compostela 15782, Spain

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2014年 / 61卷 / 02期

基金：

英国工程与自然科学研究理事会;

关键词：

FinFET; finite element method (FEM); Monte Carlo (MC) simulations; quantum effects; Schrodinger equation; IMPURITY SCATTERING; SURFACE-ROUGHNESS; MOBILITY; STATE;

D O I：

10.1109/TED.2013.2296209

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Solutions of the 2-D Schrodinger equation across the channel using a finite element method have been implemented into a 3-D finite element (FE) ensemble Monte Carlo (MC) device simulation toolbox as quantum corrections. The 2-D FE Schrodinger equation-based quantum corrections are entirely calibration free and can accurately describe quantum confinement effects in arbitrary device cross sections. The 3-D FE quantum corrected MC simulation is based on the tetrahedral decomposition of the simulation domain and the 2-D Schrodinger equation is solved at prescribed transverse planes of the 3-D mesh in the transport direction. We apply the method to study output characteristics of a nonplanar nanoscaled MOSFET, a 10.7-nm gate length silicon-on-insulator FinFET, investigating < 100 > and < 110 > channel orientations. The results are then compared with those obtained from 3-D FE MC simulations with quantum corrections via the density gradient method showing very similar I - V characteristics but very different density distributions.

引用

页码：423 / 429

页数：7

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