Electron field emission from thin films of amorphous carbon nitride synthesized by arc ion plating

被引：5

作者：

Sugimura, H ^{[1
]}

Sato, Y ^{[1
]}

Ando, Y ^{[1
]}

Tajima, N ^{[1
]}

Takai, O ^{[1
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Dept Mat Proc Engn, Nagoya, Aichi 4648603, Japan

来源：

THIN SOLID FILMS | 2002年 / 407卷 / 1-2期

关键词：

electron field emission; amorphous carbon nitride; arc ion plating;

D O I：

10.1016/S0040-6090(02)00020-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Field emission characteristics of amorphous carbon nitride (a-C:N) thin films were studied in the applied Field strength range of up to 20 V/mum by comparing the characteristics of amorphous carbon (a-C) thin films. Both a-C:N and a-C films were deposited on Si substrates by means of shielded arc ion plating (SAIP) using nitrogen or argon as an operating gas, respectively, and graphite as a solid carbon source. The a-C:N films showed better field emission current densities than the a-C films. Nitrogen doping to a-C was found to be effective in order to improve the field emission characteristics. Among all of the fabricated a-C:N films, the film containing 23% nitrogen, prepared using a nitrogen arc plasma at a pressure of 1 Pa by applying a sample bias voltage of -100 V, showed the lowest threshold field and the highest emission current density. Furthermore, thickness of this a-C:N was optimized to be approximately 40 nm in order to obtain the best field emission characteristics, that is, a threshold field of 12 V/mum and an emission current density of 3.6 muA/cm(2) at a field of 20 V/mum. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：104 / 108

页数：5

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