Free-standing and overgrown InGaAs/GaAs nanotubes, nanohelices and their arrays

被引：664

作者：

Prinz, VY ^{[1
]}

Seleznev, VA ^{[1
]}

Gutakovsky, AK ^{[1
]}

Chehovskiy, AV ^{[1
]}

Preobrazhenskii, VV ^{[1
]}

Putyato, MA ^{[1
]}

Gavrilova, TA ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia

来源：

PHYSICA E | 2000年 / 6卷 / 1-4期

基金：

俄罗斯基础研究基金会;

关键词：

nanotubes; GaAs; InAs;

D O I：

10.1016/S1386-9477(99)00249-0

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The possibility is shown to fabricate a wide class of free-standing nano-objects based on few monolayers thick scrolled heterostructures. Using an ultra-thin film (1 ML GaAs:1 ML InAs), nanotubes with an inside diameter of approximate to 2 nm have been obtained, which constitutes the limiting size for this system. Molecular-beam-expitaxy overgrown structures with nanotubes embedded into GaAs have been obtained. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：828 / 831

页数：4

共 5 条

[1] ELASTIC-CONSTANTS OF GAAS FROM 2 K TO 320 K
COTTAM, RI
SAUNDERS, GA
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (13): : 2105 - 2118
[2] Ballistic transport and spin-orbit interaction of two-dimensional electrons on a cylindrical surface
Magarill, LI
Romanov, DA
Chaplik, AV
[J]. JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS, 1998, 86 (04) : 771 - 779
[3] Nanoscale engineering using controllable formation of ultra-thin cracks in heterostructures
Prinz, VY
Seleznev, VA
Samoylov, VA
Gutakovsky, AK
[J]. MICROELECTRONIC ENGINEERING, 1996, 30 (1-4) : 439 - 442
[4] PRINZ VY, 1998, P 24 INT C PHYS SEM
[5] EXTREME SELECTIVITY IN THE LIFT-OFF OF EPITAXIAL GAAS FILMS
YABLONOVITCH, E
GMITTER, T
HARBISON, JP
BHAT, R
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (26) : 2222 - 2224

← 1 →