High-Performance Near-Infrared Phototransistor Based on n-Type Small-Molecular Organic Semiconductor

被引：72

作者：

Li, Feng ^{[1
]}

Chen, Yin ^{[2
]}

Ma, Chun ^{[1
]}

Buttner, Ulrich ^{[1
]}

Leo, Karl ^{[3
]}

Wu, Tom ^{[1
]}

机构：

[1] KAUST, Div Phys Sci & Engn PSE, Thuwal 23955, Saudi Arabia

[2] Cent S Univ, Coll Chem & Chem Engn, Changsha 410083, Hunan, Peoples R China

[3] Tech Univ Dresden, Inst Angew Photophys, D-01062 Dresden, Germany

来源：

ADVANCED ELECTRONIC MATERIALS | 2017年 / 3卷 / 01期

关键词：

FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; HIGH-ELECTRON-MOBILITY; SINGLE-CRYSTAL; BULK HETEROJUNCTION; CHARGE-TRANSPORT; DESIGN; PHOTODETECTORS; DETECTORS;

D O I：

10.1002/aelm.201600430

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

[No abstract available]

引用

页数：7

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