Structure, magnetic and electrical properties of CeIrSb and its hydride CeIrSbH0.8

被引：8
作者：
Gaudin, Etienne [2 ]
Chevalier, Bernard [2 ]
Hermes, Wilfried [1 ]
Rodewald, Ute Ch. [1 ]
Poettgen, Rainer [1 ]
机构：
[1] Univ Munster, Inst Anorgan & Analyt Chem, D-48149 Munster, Germany
[2] Univ Bordeaux, CNRS, ICMCB, F-33608 Pessac, France
来源：
JOURNAL OF SOLID STATE CHEMISTRY | 2009年 / 182卷 / 07期
关键词：
Intermetallic compounds; Crystal chemistry; CeIrSb; Kondo system; Metal hydrides; HYDROGEN-INDUCED ANTIFERROMAGNETISM; RARE-EARTH ELEMENT; STANNIDE CENISN; BEHAVIOR; VALENCE; CE(RH1-XRUX)2SI2; DIAGRAM; SYSTEM; FAMILY; CERHSB;
D O I：
10.1016/j.jssc.2009.04.031
中图分类号：
O61 [无机化学];
学科分类号：
070301 ; 081704 ;
摘要：
The ternary antimonide CeIrSb absorbs hydrogen under moderate temperature and pressure conditions (4 MPa and 573 K) leading to the hydride CeIrSbH0.8. The crystal structures of both compounds have been investigated by X-ray diffraction oil powders and single crystals: TiNiSi type, space group Pnma, a = 735.07(7), b = 456.93(4), c = 792,8(1) pm, R1/wR2 = 0.0206/0.0395, 601 F-2 values for CeIrSb and a = 728.16(14), b = 460.35(6), c = 825.87(2) pm, R1/wR2 = 0.0322/0.0735, 528 F-2 Values for CeIrSbH0.8 with 20 variables per refinement. Hydrogenation induces both all increase of the cell Volume V (+4%) and a strongly anisotropic expansion of the unit cell with a maximum of 4.3% in the c direction, leading to a significant increase of the Ce-Ir and Ce-Ce distances in this direction. The H-insertion into CeIrSb leads to a magnetic transition from intermediate valence to antiferromagnetic behavior (T-N = 7.0 K) evidenced by magnetization, electrical resistivity and specific heat measurements. This transition call be explained on the basis of the Doniach diagram considering the J(cf) interaction between the 4f(Ce) and conduction electrons. (C) 2009 Elsevier Inc. All rights reserved
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页码：1827 / 1832
页数：6
相关论文
共 41 条
[1]   Structural and hydrogen sorption studies of NdNi5-xAlx and GdNi5-xAlx [J].
Bobet, JL ;
Pechev, S ;
Chevalier, B ;
Darriet, B .
JOURNAL OF ALLOYS AND COMPOUNDS, 1998, 267 (1-2) :136-141
[2]   The REME phases - I. An overview of their structural variety [J].
Bojin, MD ;
Hoffmann, R .
HELVETICA CHIMICA ACTA, 2003, 86 (05) :1653-1682
[3]   SPECIFIC-HEAT OF THE HEAVY FERMION SYSTEM CE(RH1-XRUX)2SI2 [J].
CALEMCZUK, R ;
BONJOUR, E ;
ROSSATMIGNOD, J ;
CHEVALIER, B .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1990, 90-1 :477-478
[4]   Inducing magnetism in the Kondo semiconductor CeRhSb through hydrogenation:: Antiferromagnetic behavior of the new hydride CeRhSbH0.2 [J].
Chevalier, B. ;
Decourt, R. ;
Heying, B. ;
Schappacher, F. M. ;
Rodewald, U. Ch. ;
Hoffmann, R. -D. ;
Poettgen, R. ;
Eger, R. ;
Simon, A. .
CHEMISTRY OF MATERIALS, 2007, 19 (01) :28-35
[5]   The Doniach diagram and hydrogenation of the ternary compounds CePdIn and CePdSn [J].
Chevalier, B ;
Wattiaux, A ;
Bobet, JL .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2006, 18 (05) :1743-1755
[6]   Hydrogenation of the ternary compounds CeNiX (X = Al, Ga, In, Si, Ge and Sn): influence on the valence state of cerium [J].
Chevalier, B ;
Pasturel, M ;
Bobet, JL ;
Decourt, R ;
Etourneau, J ;
Isnard, O ;
Marcos, JS ;
Fernandez, JR .
JOURNAL OF ALLOYS AND COMPOUNDS, 2004, 383 (1-2) :4-9
[7]   Magnetic ordering induced by the hydrogenation of the ternary stannide CeNiSn [J].
Chevalier, B ;
Pasturel, M ;
Bobet, JL ;
Etourneau, J ;
Isnard, O ;
Marcos, JS ;
Fernandez, JR .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2004, 272 :576-578
[8]   119Sn Mossbauer spectroscopy studies of hydrides deriving from the stannide CeNiSn [J].
Chevalier, B ;
Wattiaux, A ;
Fournès, L ;
Pasturel, M .
SOLID STATE SCIENCES, 2004, 6 (06) :573-577
[9]   Ferromagnetic behavior of the new hydride CeNiSnH1.8(2) [J].
Chevalier, B ;
Bobet, JL ;
Pasturel, M ;
Bauer, E ;
Weill, F ;
Decourt, R ;
Etourneau, J .
CHEMISTRY OF MATERIALS, 2003, 15 (11) :2181-2185
[10]   INFLUENCE OF CRYSTALLINE FIELD ON KONDO EFFECT OF ALLOYS AND COMPOUNDS WITH CERIUM IMPURITIES [J].
CORNUT, B ;
COQBLIN, B .
PHYSICAL REVIEW B, 1972, 5 (11) :4541-&
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