Performance Analysis of SiC MOSFET Based 3-Level ANPC Grid-Connected Inverter with Novel Modulation Scheme

被引:0
作者
Gurpinar, Emre [1 ]
De, Dipankar [1 ]
Castellazzi, Alberto [1 ]
Barater, Davide [2 ]
Buticchi, Giampaolo [2 ]
Francheschini, Giovanni [2 ]
机构
[1] Univ Nottingham, Power Elect Machines & Control Grp, Nottingham NG7 2RD, England
[2] Univ Parma, Dept Informat Engn, I-43100 Parma, Italy
来源
2014 IEEE 15TH WORKSHOP ON CONTROL AND MODELING FOR POWER ELECTRONICS (COMPEL) | 2014年
关键词
Renewable energy; SiC MOSFET; Single phase inverters; Transformerless PV inverter; ANPC; Active Neutral Point Clamped Inverter;
D O I
暂无
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Performance analysis of three-level active neutral point clamped (ANPC) inverter with 650V SiC MOSFETs by ROHM is presented with a new switching pattern that utilises the active rectification capability of SiC devices. Performance analysis of the converter with 700V DC link and 230V(rms) grid voltage are presented for different switching frequency, device case temperature and load conditions. The switching frequency is varied from 10kHz to 80kHz at four different output power and four different heat sink temperature conditions. The experimental results show that the converter can maintain high efficiency under wide load, frequency and heat sink temperature conditions. Robust performance of SiC devices can lead to reduction in passive component size, by utilizing high switching frequency and heat sink weight and volume by operating SiC at higher case temperature conditions.
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页数:7
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