Hot carrier and soft breakdown effects on VCO performance

被引：0
|
作者：
Xiao, EJ [1 ]
Yuan, JS [1 ]
机构：
[1] Univ Cent Florida, Sch Elect Engn & Comp Sci, Chip Design & Reliabil Lab, Orlando, FL 32816 USA
来源：
2002 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2002年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper systematically investigates the hot carrier and soft-breakdown induced performance degradation in a CMOS voltage-controlled oscillator used in phase locked loop frequency synthesizers. After deriving the closed-form equations to predict phase noise and VCO gain, we relate VCO RF performance such as phase noise, tuning range and gain of VCO subject to electrical stress. The circuit degradations predicted by analytical model equations are verified by SpectraRF simulation using parameters extracted from the experimental data of 0.16 mum CMOS technology.
引用
收藏
页码：459 / 462
页数：4
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