Diffusion-drift model of fully depleted SOI MOSFET

被引：0

作者：

Zebrev, G. I. ^{[1
]}

Gorbunov, M. S. ^{[1
]}

机构：

[1] Moscow Engn Phys Inst, Dept Microelect, Kashirskoye Shosse 31, Moscow 115409, Russia

来源：

2006 25TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS | 2006年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Based on explicit analytical solution of drain current continuity equation a new compact physical model for fully depleted SOI MOSFET has been proposed. The model provides continuous description of I-V characteristics in all transistor operation modes.

引用

页码：545 / +

页数：2

共 4 条

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[2] Modeling the floating-body effects of fully depleted, partially depleted, and body-grounded SOI MOSFETs [J].

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[3]

ZEBREV GI, 1992, FIZ TEKH POLUPROV, V26, P83

[4]

ZEBREV GI, 1990, FIZ TEKH POLUPROV, V24, P777

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