An amorphous oxide semiconductor thin-film transistor route to oxide electronics

被引：160
作者：
Wager, John F. [1 ]
Yeh, Bao [1 ]
Hoffman, Randy L. [2 ]
Keszler, Douglas A. [3 ]
机构：
[1] Oregon State Univ, Sch EECS, Corvallis, OR 97331 USA
[2] Hewlett Packard Corp, Corvallis, OR 97330 USA
[3] Oregon State Univ, Dept Chem, Corvallis, OR 97331 USA
来源：
CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE | 2014年 / 18卷 / 02期
基金：
美国国家科学基金会;
关键词：
Oxide electronics; Amorphous oxide semiconductor (AOS); Thin-film transistor (TFT); Flat-panel displays; Indium gallium zinc oxide (IGZO); Active-matrix liquid crystal display (AMLCD); Active-matrix organic light-emitting diode (AMOLED); INSTABILITY; TFT;
D O I：
10.1016/j.cossms.2013.07.002
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) invented only one decade ago are now being commercialized for active-matrix liquid crystal display (AMLCD) backplane applications. They also appear to be well positioned for other flat-panel display applications such as active-matrix organic light-emitting diode (AMOLED) applications, electrophoretic displays, and transparent displays. The objectives of this contribution are to overview AOS materials design; assess indium gallium zinc oxide (IGZO) TFTs for AMLCD and AMOLED applications; identify several technical topics meriting future scrutiny before they can be confidently relied upon as providing a solid scientific foundation for underpinning AOS TFT technology; and briefly speculate on the future of AOS TFTs for display and non-display applications. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码：53 / 61
页数：9
相关论文
共 48 条
[1]   Oxide-TFT technologies for next-generation AMOLED displays [J].
Arai, Toshiaki .
JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, 2012, 20 (03) :156-161
[2]   Extraction of Subgap Donor States in a-IGZO TFTs by Generation-Recombination Current Spectroscopy [J].
Bae, Minkyung ;
Kim, Yongsik ;
Kim, Sungchul ;
Kim, Dong Myong ;
Kim, Dae Hwan .
IEEE ELECTRON DEVICE LETTERS, 2011, 32 (09) :1248-1250
[3]  
Boer KW, 2002, SURVEY SEMICONDUCTOR, VII, p[615, 621]
[4]   Transparent Al-Zn-Sn-O thin film transistors prepared at low temperature [J].
Cho, Doo-Hee ;
Yang, Shinhyuk ;
Byun, Chunwon ;
Shin, Jaeheon ;
Ryu, Min Ki ;
Park, Sang-Hee Ko ;
Hwang, Chi-Sun ;
Chung, Sung Mook ;
Cheong, Woo-Seok ;
Yoon, Sung Min ;
Chu, Hye-Yong .
APPLIED PHYSICS LETTERS, 2008, 93 (14)
[5]   Light induced instabilities in amorphous indium-gallium-zinc-oxide thin-film transistors [J].
Chowdhury, Md Delwar Hossain ;
Migliorato, Piero ;
Jang, Jin .
APPLIED PHYSICS LETTERS, 2010, 97 (17)
[6]   Instabilities in Amorphous Oxide Semiconductor Thin-Film Transistors [J].
Conley, John F., Jr. .
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2010, 10 (04) :460-475
[7]  
Cox P.A., 1989, ELEMENTS
[8]  
den Boer Willem., 2005, ACTIVE MATRIX LIQUID
[9]  
Facchetti A., 2010, TRANSPARENT ELECT SY
[10]   Two-dimensional numerical simulation of radio frequency sputter amorphous In-Ga-Zn-O thin-film transistors [J].
Fung, Tze-Ching ;
Chuang, Chiao-Shun ;
Chen, Charlene ;
Abe, Katsumi ;
Cottle, Robert ;
Townsend, Mark ;
Kumomi, Hideya ;
Kanicki, Jerzy .
JOURNAL OF APPLIED PHYSICS, 2009, 106 (08)
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